期刊
NATURE NANOTECHNOLOGY
卷 8, 期 2, 页码 119-124出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2012.256
关键词
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资金
- US Army Research Office (MURI) [W911NF-11-1-0362]
- US Office of Naval Research (MURI) [N000014-09-1-1066]
- Nanoelectronics Research Corporation [S201006]
- US-Japan Cooperative Research & Education in Terahertz [OISE-0968405]
- Welch Foundation [C-1716]
- National Science Foundation (NSF) [DMR-0928297, DMR-0938330]
- Oak Ridge National Laboratory's Shared Research Equipment (ShaRE) User Program
- Office of Basic Energy Sciences, US Department of Energy
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0938330] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0928297] Funding Source: National Science Foundation
- Office Of The Director
- Office Of Internatl Science &Engineering [968405] Funding Source: National Science Foundation
Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature(1-3), whereas an atomically thin layer of h-BN4-9 is a dielectric with a wide bandgap of similar to 5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be seamlessly stitched together, hybrid atomic layers with interesting electronic applications could be created(10). Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size ranging from tens of nanometres to millimetres. The resulting graphene/h-BN atomic layers can be peeled off the growth substrate and transferred to various platforms including flexible substrates. We also show that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter.
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