期刊
NATURE NANOTECHNOLOGY
卷 8, 期 1, 页码 41-45出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2012.217
关键词
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资金
- Office of Naval Research [N00014-10-1-0668, N00014-11-1-0779]
- National Science Foundation [DMR-1204924]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1204924] Funding Source: National Science Foundation
Integrating graphene into device architectures requires interfacing graphene with dielectric materials(1-3). However, the dewetting and thermal instability of dielectric layers on top of graphene makes fabricating continuous graphene/dielectric interfaces challenging(4-9). Here, we show that yttria (Y2O3)-a high-kappa dielectric-can form a complete monolayer on platinum-supported graphene. The monolayer interacts weakly with graphene, but is stable to high temperatures. Scanning tunnelling microscopy reveals that the yttria layer exhibits a two-dimensional hexagonal lattice rotated by 30 degrees relative to the hexagonal graphene lattice. X-ray photoemission spectroscopy measurements indicate a shift of the Fermi level in graphene on yttria deposition, which suggests that dielectric layers could be used for charge doping of metal-supported graphene.
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