4.8 Article

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

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NATURE NANOTECHNOLOGY
卷 4, 期 4, 页码 239-244

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2008.418

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资金

  1. Science Foundation Ireland [02/IN.1/172]
  2. EU Network of Excellence nanoPhotonics to Realise Molecular Scale Technologies (PhOREMOST) [FP6/2003/IST/2-511616]
  3. Programa Bicentenario de Cienca y Tecnologia (PBCT), Chile [ACT027]
  4. Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazil
  5. ICREA Funding Source: Custom

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Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells', flat-panel displays(1,3), antireflection coatings(4), radiation protection(5) and lithium-ion battery materials(6), because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible(7), high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nano-wires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices.

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