期刊
NATURE NANOTECHNOLOGY
卷 3, 期 7, 页码 402-407出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/nnano.2008.161
关键词
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Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications(1-5). Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices(6-9). However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.
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