期刊
NATURE MATERIALS
卷 17, 期 9, 页码 800-+出版社
NATURE PORTFOLIO
DOI: 10.1038/s41563-018-0136-z
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资金
- C-SPIN
- NSF through the UMN MRSEC programme [DMR-1420013]
- NSF through the NNIN programme
- King Abdullah University of Science and Technology (KAUST)
The spin-orbit torque (SOT) that arises from materials with large spin-orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/Co20Fe60B20 heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (theta(S)) was determined to be as large as 18.62 +/- 0.13 and 8.67 +/- 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the BixSe(1-x) was observed at room temperature with a low critical magnetization switching current density of 4.3 x 10(5) A cm(-2). Quantum transport simulations using a realistic sp(3) tight-binding model suggests that the high SOT in sputtered BixSe(1-x) is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated theta(S), ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on BixSe(1-x) films provide an avenue for the use of BixSe(1-x) as a spin density generator in SOT-based memory and logic devices.
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