期刊
NATURE MATERIALS
卷 14, 期 2, 页码 160-163出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT4144
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资金
- NSF
- Center for Nanoscale Materials [CNM 39211]
- Knut AMP
- Alice Wallenberg Foundation
- Linkoping Linnaeus Initiative for Novel Functionalized Materials
- Swedish Government Strategic Research Area Grant in Materials Science (Advanced Functional Materials)
- Ministry of Education, Science, Sports and Culture of Japan [26286047]
- AFOSR MURI
- Grants-in-Aid for Scientific Research [26286047] Funding Source: KAKEN
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1306300] Funding Source: National Science Foundation
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries(1). Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing(2-16). Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects(2,3), these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.
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