期刊
NATURE MATERIALS
卷 12, 期 5, 页码 422-425出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT3570
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资金
- [BO 1912/3-1]
- [BO 1912/2-2]
- [ZA 654/1-1]
Commonly, materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators has fundamentally challenged this dichotomy. In a topological insulator, the spin-orbit interaction generates a non-trivial topology of the electronic band structure dictating that its bulk is perfectly insulating, whereas its surface is fully conducting. The first topological insulator candidate material put forward-graphene-is of limited practical use because its weak spin-orbit interactions produce a bandgap of similar to 0.01 K. Recent reexaminations of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional topological insulators. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional topological insulators: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogues, but with a honeycomb net composed of RhBi8 cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a topological insulator with a 2,400 K bandgap.
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