4.8 Article

Tightly bound trions in monolayer MoS2

期刊

NATURE MATERIALS
卷 12, 期 3, 页码 207-211

出版社

NATURE RESEARCH
DOI: 10.1038/NMAT3505

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资金

  1. National Science Foundation [DMR-0907477, DMR-1106172, DMR-1122594]
  2. Research Corporation Scialog Program at Case Western Reserve University
  3. Department of Energy, Office of Basic Energy Sciences at Columbia University [DE-FG02-07ER15842]
  4. Department of Energy, Office of Basic Energy Sciences at Columbia University's Center for Re-Defining Photovoltaic Efficiency through Molecule Scale Control [DE-SC0001085]
  5. Korean government Ministry of Education grant Global Frontier Research Center for Advanced Soft Electronics [2011-0031629]
  6. Samsung-SKKU Graphene Center
  7. National Research Foundation of Korea [2011-0031629] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. Direct For Mathematical & Physical Scien
  9. Division Of Materials Research [1106172] Funding Source: National Science Foundation
  10. Division Of Materials Research
  11. Direct For Mathematical & Physical Scien [0907477] Funding Source: National Science Foundation

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Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties(1). In contrast to graphene, monolayer MoS2 is a non-centrosymmetric material with a direct energy gap(2,5). Strong photoluminescence(2,3) a current on/off ratio exceeding 10(8) in field-effect transistors(6), and efficient valley and spin control by optical helicity(7-9) have recently been demonstrated in this material. Here we report the spectroscopic identification in a monolayer MoS2 field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole. These quasiparticles, which can be optically created with valley and spin polarized holes, have no analogue in conventional semiconductors. They also possess a large binding energy (similar to 20 meV), rendering them significant even at room temperature. Our results open up possibilities both for fundamental studies of many-body interactions and for optoelectronic and valleytronic applications in 2D atomic crystals.

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