期刊
NATURE MATERIALS
卷 9, 期 6, 页码 496-503出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT2751
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资金
- MIUR [FIRBRBIP06YWBH, FIRB-RBIP0642YL]
- MSE [Industria 2015]
- EU [PF6 035859-2, FP7-ICT-248052]
The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton-charge annihilation and electrode photon losses are prevented. Our devices are > 100 times more efficient than the equivalent OLED, > 2x more efficient than the optimized OLED with the same emitting layer and > 10 times more efficient than any other reported OLETs.
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