期刊
NANOTECHNOLOGY
卷 29, 期 50, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aae4d3
关键词
charge trapping memories; high-k dielectrics; HfO2/Al2O3 nanolaminated stacks; atomic layer deposition
资金
- European Regional Development Fund within the Operational Programme ` Science and Education for Smart Growth 2014-2020' under the Project CoE ` National center of mechatronics and clean technologies [BG05M2OP001-1.001-0008-C01]
HfO2/Al2O3 nanolaminated stacks prepared by atomic layer deposition have been investigated in terms of their charge storage characteristics for possible application in charge trapping memories. It is shown that the memory window, electron and hole trapping and leakage currents depend strongly on Al2O3 thickness and post-deposition oxygen annealing. Depending on the Al2O3 thickness, postdeposition annealing in O-2 creates different electrically active defects (oxide charge and traps) in the stacks. O-2 annealing increases electron trapping, thus giving rise to a larger memory window and enhanced charge storage characteristics, i. e. 65% of charge is retained after ten years and the memory window decreases by 6% after 2.5x10(4) program/erase cycles.
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