期刊
NANOTECHNOLOGY
卷 25, 期 36, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/25/36/365201
关键词
electric-pulse induced resistance switching; single-molecule magnet; spin-transfer torque
资金
- National Science Foundation of China [11023002, 11247303]
- State Key Program for Basic Researches of China [2011CB922103]
- Postdoctoral Science Foundation of China [2013M541635]
- Postdoctoral Science Foundation of Jiangsu Province, China [1301018B]
An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.
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