期刊
NANOTECHNOLOGY
卷 25, 期 49, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0957-4484/25/49/495204
关键词
resistive-switching device; spike-timing-dependent plasticity; neuromorphic applications
资金
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2012-0009460]
- National Research Foundation of Korea [2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, a TiN/Pr0.7Ca0.3MnO3-based resistive-switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, potentiation and depression characteristics with the same spikes can be achieved by applying negative and positive pulses, respectively. By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.
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