Stable self-compliance resistive switching in AlOδ/Ta2O5-x/TaOy triple layer devices

Stable self-compliance property was observed in the AlO delta/Ta2O5-x/TaOy triple-layer resistive random access memory structure. The impact of AlO delta barrier layer was studied with different thicknesses. Endurance of more than 10(10) cycles and data retention for more than 3 h at 125 degrees C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlO delta barrier layer. A model is proposed to explain this self-compliance property.