期刊
NANOTECHNOLOGY
卷 24, 期 21, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/21/214002
关键词
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资金
- ANR project 'WITH'
- CNRS
- GDR-I project 'Semiconductor sources and detectors of THz frequencies'
- US-French initiative 'PUF'
- Scientifique Interest Groupement GIS-TERALAB
- US NSF under the auspices of the NSF EAGER program
- ARL
- Italian Ministry of Education, University, and Research (MIUR) through the program 'FIRB-Futuro in Ricerca' [RBFR10LULP]
Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.
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