4.6 Article

Nanometer size field effect transistors for terahertz detectors

期刊

NANOTECHNOLOGY
卷 24, 期 21, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/21/214002

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资金

  1. ANR project 'WITH'
  2. CNRS
  3. GDR-I project 'Semiconductor sources and detectors of THz frequencies'
  4. US-French initiative 'PUF'
  5. Scientifique Interest Groupement GIS-TERALAB
  6. US NSF under the auspices of the NSF EAGER program
  7. ARL
  8. Italian Ministry of Education, University, and Research (MIUR) through the program 'FIRB-Futuro in Ricerca' [RBFR10LULP]

向作者/读者索取更多资源

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.

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