期刊
NANOTECHNOLOGY
卷 24, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/31/315502
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资金
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2013016165]
- IT R&D program of MKE/KEIT [10041416]
- Korea Communications Agency (KCA) [10041416] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013R1A2A1A01016165] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO2 nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array. SnO2 NW UV sensors showed an average photosensitivity of similar to 10(5) and a photoconductive gain of similar to 10(6) under very low UV (lambda = 254 nm) power intensities of 0.02-0.04 mW cm(-2). The UV sensing performance was not deteriorated by a prestrain of up to 23% induced by radial deformation, consistent with the mechanical analysis.
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