期刊
NANOTECHNOLOGY
卷 24, 期 49, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/49/495701
关键词
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资金
- National Natural Science Foundation of China [51302035, 21171035]
- Shanghai Natural Science Foundation [13ZR1451200]
- Specialized Research Fund for the Doctoral Program of Higher Education [20130075120001]
- Key Grant Project of Chinese Ministry of Education [313015]
- Shanghai Leading Academic Discipline Project [B603]
- PhD Programs Foundation of the Ministry of Education of China [20110075110008]
- National 863 Program of China [2013AA031903]
- Fundamental Research Funds for the Central Universities
- Shanghai University Young Teacher Training Program
- Starting Funding for Youth Teacher in Donghua University
- Japanese Society for the Promotion of Science [24760285, 24760032]
- Grants-in-Aid for Scientific Research [24760032, 24760285] Funding Source: KAKEN
Photodetectors fabricated from one-dimensional semiconductors are always dominated by the surface states due to their large surface-to-volume ratio. Therefore, the basic 5S requirements (high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability) for practical photodetectors are difficult to satisfy. We report on high-temperature and high-detectivity solar-blind deep-ultraviolet (DUV) photodetectors based on beta-Ga2O3 nanowires, in which the photoresponse behavior is dominated by the bulk instead of the surface states. Ohmic contact to the beta-Ga2O3 nanowires was achieved by using a thermally stable tungsten carbide electrode. As a result, the DUV responsivity at 250 nm shows the highest values-4492 A W-1 at room temperature (RT) and 3000 A W-1 at 553 K (280 degrees C)-among the DUV photodetectors. The detectivity is as high as 1.26 x 10(16) cm Hz(1/2) W-1 at RT, and still remains 4.1 x 10(14) cm Hz(1/2) W-1 at as high a temperature as 553 K. The photocurrent dynamics from the beta-Ga2O3 nanowire is discussed in terms of the bulk dominated photoresponse behavior. Other wide bandgap DUV detectors based on nanostructures could also be developed for high-temperature applications based on this work.
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