期刊
NANOTECHNOLOGY
卷 24, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/39/395203
关键词
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资金
- Department of Energy [DE-FG02-08ER46520]
- Defense Microelectronics Activity (DMEA) [H94003-10-2-1003]
- U.S. Department of Energy (DOE) [DE-FG02-08ER46520] Funding Source: U.S. Department of Energy (DOE)
Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth times in a chemical vapor deposition system. The growth mechanism is discussed. The Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-dependent photoluminescence and nanorod back-gated field effect transistor measurements. The undoped nanorods, Na-doped nanorods and undoped seed layer form an n-p-n memory structure. The programming and retention characteristics have been demonstrated.
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