期刊
NANOTECHNOLOGY
卷 24, 期 17, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/17/175202
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资金
- MKE
- KIAT
- National Research Foundation (NRF) [R31-10026]
- Korea government (MEST)
- Inter-ER Cooperation Projects
- Korea Evaluation Institute of Industrial Technology (KEIT) [R0000448] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric polymer (PVDF-TrFE)/graphene stack has been demonstrated. The conductivity of this metal-ferroelectric-graphene (MFG) device could be modulated up to 775% with a very fast programming speed down to 10 ns. Also, programmed states were maintained up to 1000 s with endurance over 1000 cycles. In addition to demonstrating a single memory device, the array-level integration and cell write/read functionality of a 4 x 4 MFG array adopting a graphene bit line has also been confirmed to show the feasibility of MFG memory.
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