High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes

We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS2, which exhibit an on/off ratio exceeding 2 x 10(6) and a carrier mobility of similar to 1 cm(2) V-1 s(-1). The results demonstrate the great potential of SnS2, a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.