期刊
NANOTECHNOLOGY
卷 23, 期 48, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/48/485701
关键词
-
资金
- European Commission (SMASH project) [228999]
- EU FP7 [GECCO 280694-2]
- [CAM/P2009/ESP-1503]
We demonstrate the potential of low-loss electron energy-loss spectroscopy in transmission electron microscopy as a quick and straightforward method to determine the local indium compositions in (In,Ga)N/GaN nanowires. The (In,Ga)N/GaN nanowire heterostructures are grown by plasma assisted molecular beam epitaxy on Si(111) substrates in a self-assembled way, and on patterned GaN templates in an ordered way. A wide range of indium contents is realized by varying the substrate temperatures. The plasmon peak in low-loss electron energy-loss spectroscopy exhibits a linear relation with respect to indium concentration in (In,Ga)N nanowires, allowing for a direct compositional analysis. The high spatial resolution of this method in combination with structural information from transmission electron microscopy will contribute to a basic understanding of the lattice pulling effect during (In,Ga)N/GaN nanowire growth.
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