期刊
NANOTECHNOLOGY
卷 23, 期 27, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/27/275605
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资金
- Fundamental Research Funds for the Central Universities [lzujbky-2011-52]
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics
- Office of Naval Research through the MURI program on graphene
Doping is a common and effective approach to tailor semiconductor properties. Here, we demonstrate the growth of large-area sulfur (S)-doped graphene sheets on copper substrate via the chemical vapor deposition technique by using liquid organics (hexane in the presence of S) as the precursor. We found that S could be doped into graphene's lattice and mainly formed linear nanodomains, which was proved by elemental analysis, high resolution transmission microscopy and Raman spectra. Measurements on S-doped graphene field-effect transistors (G-FETs) revealed that S-doped graphene exhibited lower conductivity and distinctive p-type semiconductor properties compared with those of pristine graphene. Our approach has produced a new member in the family of graphene based materials and is promising for producing graphene based devices for multiple applications.
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