期刊
NANOTECHNOLOGY
卷 23, 期 18, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/18/185202
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资金
- National Research Program for Nano Semiconductor Apparatus Development
- Korean Ministry of Knowledge and Economy
- Convergent Research Center through the National Research Foundation of Korea [2011K000610]
- Ministry of Education, Science, and Technology
- Applied Materials
- National Research Foundation of Korea [2010-50170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A tri-stable memristive switching was demonstrated on a Pt/TiO2/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO2/TiO2-x/Pt cell.
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