期刊
NANOTECHNOLOGY
卷 23, 期 32, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/32/325601
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资金
- Consejo Nacional de Ciencia y Tecnologia, CONACyT [48296]
- Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la Tecnologia, CIACyT-UASLP
- NSF [0940902]
In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI3), it was possible to form covalent bonds between the Ga3+ ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy
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