期刊
NANOTECHNOLOGY
卷 23, 期 49, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/49/495602
关键词
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资金
- Japan Society for the Promotion of Science (JSPS) [22360056]
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- Asahi Glass Foundation
- Global COE program, 'Global Center of Excellence for Mechanical Systems Innovation' by MEXT
- MEXT, Japan
- Grants-in-Aid for Scientific Research [22360056, 23760632, 19053003, 11J04501] Funding Source: KAKEN
A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [0 (2) over bar1] oriented ZnAl2O4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of similar to 10(17) cm(-3) with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO-ZnGa2O4 core-shell nanowire array on a film structure. The fabricated ZnO-ZnGa2O4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.
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