期刊
NANOTECHNOLOGY
卷 22, 期 37, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/37/375302
关键词
-
资金
- Swiss National Science Foundation [20NAN1-123611]
Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.
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