期刊
NANOTECHNOLOGY
卷 22, 期 20, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/20/205204
关键词
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资金
- National Research Laboratory (NRL) Program
- National Core Research Center
- Korean Ministry of Education, Science and Technology (MEST)
- GIST
- Ministry of Education, Science & Technology (MoST), Republic of Korea [gist-15, gist-03-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R31-2011-000-10022-0, 2007-0055761, 2008-0062153, R31-2011-000-10026-0, 2008-0062150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.
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