High performance field-effect transistors fabricated with laterally grown ZnO nanorods in solution

We have exploited a method for the lateral growth of multiple ZnO nanorods between electrodes in solution without the use of a metal catalyst to fabricate high performance field-effect transistors (FETs). This method enables us to directly align overlapped or overlap-free nanowires between electrodes by eliminating the vertical growth components and complex structural networks. The overlap-free ZnO nanorod FETs showed better performance with a mobility of similar to 8.5 cm(2) V-1 s(-1) and an on/off ratio of similar to 4 x 10(5) than the overlapped ZnO nanorod FETs having a mobility of similar to 5.3 cm(2) V-1 s(-1) and an on/off ratio of similar to 3 x 10(4). All the FETs fabricated in this work showed much better performance than the previously reported solution-based ZnO FETs.