期刊
NANOTECHNOLOGY
卷 22, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/39/395302
关键词
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资金
- NSF-DMR [10-05645]
- US Department of Energy through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign [DE-FG02-07ER46453, DE-FG02-07ER46471]
We present a method for in situ tuning of the critical current (or switching current) and critical temperature of a superconducting MoGe nanowire using high bias voltage pulses. Our main finding is that as the pulse voltage is increased, the nanowire demonstrates a reduction, a minimum and then an enhancement of the switching current and critical temperature. Using controlled pulsing, the switching current of a superconducting nanowire can be set exactly to a desired value. These results correlate with in situ transmission electron microscope imaging where an initially amorphous nanowire transforms into a single crystal nanowire by high bias voltage pulses. We compare our transport measurements to a thermally activated model of Little's phase slips in nanowires.
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