4.6 Article

A crossbar-type high sensitivity ultraviolet photodetector array based on a one hole-one nanorod configuration via nanoimprint lithography

期刊

NANOTECHNOLOGY
卷 22, 期 27, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/27/275310

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资金

  1. Korea Science and Engineering Foundation (KOSEF) [R15-2008-006-03002-0]
  2. Gwangju Institute of Science and Technology (GIST)
  3. Korean Ministry of Education, Science and Technology (MEST) [2007-02939]
  4. DOE [DE-FG36-08G018016]
  5. NSF [ARRA ECCS0901113]
  6. Sunchon National University, Korea
  7. Div Of Electrical, Commun & Cyber Sys
  8. Directorate For Engineering [0901113] Funding Source: National Science Foundation

向作者/读者索取更多资源

Single crystalline vertical ZnO nanorods were grown in a one hole-one rod configuration using a hydrothermal method with a patterned polymer template generated by nanoimprint lithography, allowing precise control over the position and density of the ZnO nanorods. An 8 x 8 ZnO nanorod-based ultraviolet photodetector array is demonstrated, in which a well-confined number of ZnO nanorods are sandwiched between crossbar-type platinum and indium tin oxide electrodes (e. g. 16 nanorods in a 2 x 2 mu m(2) area). A high photocurrent/dark current ratio of 3 x 10(3) at a reverse bias of 1.5 V under UV illumination at room temperature, a responsivity of 4381.4 A W-1 at 365 nm, and an ultraviolet-to-visible rejection ratio of 83 are obtained and maintained, irrespective of pixel size. A uniform photoresponse is achieved in each of the pixels, indicating the scalability with this technique for fabricating an integrated UV photodetector array circuit.

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