期刊
NANOTECHNOLOGY
卷 22, 期 25, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/25/254024
关键词
-
资金
- ISF, Israel Science Foundation
The current-voltage, I-V, relations as well as the defect distributions are calculated for solid state devices in which the acceptors are mobile. The devices are of the metal vertical bar oxide vertical bar metal (MOM) type, where the oxide is a mixed-ionic-electronic conductor. The electrodes are blocking for material exchange. I-V relations are calculated for cyclic voltammetry, high amplitude ac voltage and low amplitude ac voltage from which the ac impedance is derived. The results exhibit nonlinear I-V relations, energy storage, hysteresis, negative resistance and quasi-switching.
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