4.6 Article

Nonlinear I-V relations and hysteresis in solid state devices based on oxide mixed-ionic-electronic conductors

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NANOTECHNOLOGY
卷 22, 期 25, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/25/254024

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  1. ISF, Israel Science Foundation

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The current-voltage, I-V, relations as well as the defect distributions are calculated for solid state devices in which the acceptors are mobile. The devices are of the metal vertical bar oxide vertical bar metal (MOM) type, where the oxide is a mixed-ionic-electronic conductor. The electrodes are blocking for material exchange. I-V relations are calculated for cyclic voltammetry, high amplitude ac voltage and low amplitude ac voltage from which the ac impedance is derived. The results exhibit nonlinear I-V relations, energy storage, hysteresis, negative resistance and quasi-switching.

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