期刊
NANOTECHNOLOGY
卷 22, 期 48, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/48/485701
关键词
-
资金
- Hefei University of Technology
- National Natural Science Foundation of China [60806028, 21101051, 91027021]
- Chinese Ministry of Education [NCET-08-0764]
- Fundamental Research Funds for the Central Universities
We report the rational synthesis of one-dimensional SnO2 nanowires (SnO(2)NWs) via a Sn-catalyzed vapor-liquid-solid (VLS) growth mechanism, in which Sn nanoparticles can direct the oriented growth of SnO(2)NWs at high temperature. I-V measurement of a field effect transistor made of individual SnO(2)NWs exhibits typical n-type semiconducting characteristics with an electron mobility and concentration of 14.36 cm(2) V-1 s(-1) and 1.145 x 10(17) cm(-3), respectively. The SnO2NW-based photodetector shows a high sensitivity to UV light radiation, and a fast light response speed of millisecond rise time/fall time with excellent stability and reproducibility, whereas it is nearly blind to illumination with wavelengths in the visible range. Detailed reasons to account for the detection selectivity and rapid response speed are proposed. The generality of the above results suggests that our SnO2NW photodetectors have potential application in nanoscaled optoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据