期刊
NANOTECHNOLOGY
卷 21, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/11/115203
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资金
- Ministry of Knowledge Economy [10029953-2009-31]
- Ministry of Education, Science and Technology [2009-0094040]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10029953] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0094040] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Flexible TiO2 crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/TiO2/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/TiO2/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
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