期刊
NANOTECHNOLOGY
卷 21, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/6/065202
关键词
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资金
- National Science Foundation (NSF) through the Engineering Research Center for Integrated Access Networks (CIAN) [EEC-0812072]
- Kavli Nanoscience Institute at Caltech
- Electronics, Photonics and Device Technologies (EPDT)
- AFOSR
- Arizona Technology and Research Initiative Funding (TRIF)
- Alexander von Humboldt Foundation
- Direct For Mathematical & Physical Scien
- Division Of Physics [0757707] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0757975] Funding Source: National Science Foundation
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide ( GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide ( InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor ( Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
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