期刊
NANOTECHNOLOGY
卷 21, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/9/095502
关键词
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资金
- DARPA [W31P4Q-08-1-0009]
- BES DOE [DE-FG02-07ER46394]
- Center for Nanoscale Mechatronics and Manufacturing [2009K000192]
- Ministry of Education, Science and Technology, Korea
- Department of Energy [ER 46387]
- National Science Foundation [0725740]
- Ministry of Knowledge Economy (MKE)
- Korea Industrial Technology Foundation (KOTEF)
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0725740] Funding Source: National Science Foundation
Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of similar to 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at -0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.
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