期刊
NANOTECHNOLOGY
卷 21, 期 24, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/24/245703
关键词
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资金
- National Natural Science Foundation of China [50902004, 90606023, 10974003]
- China's Ministry of Science and Technology [2007CB936202, 2009CB623703]
- Research Fund for the Doctoral Program of Higher Education
N-doped ZnO nanowires are synthesized at a relatively low growth temperature of 500 degrees C by directly heating zinc powder using NH3 as the dopant. The incorporation of N into the ZnO nanowires is experimentally confirmed by x-ray photoelectron spectroscopy, Raman spectra and photoluminescence measurements. By combining post annealing experiments after growth with first-principles calculations, the detailed migration mechanism of N and compensation mechanism in N-doped ZnO nanowires are systematically studied. The larger aspect ratio of nanowires favors the formation of oxygen vacancy and out-diffusion of substitutional N (N-O), making N-O in ZnO nanowires always compensated by hydrogen interstitials (H-I). Our results can help to explain the challenge in getting p-type ZnO and shed new light on the possible realization of p-type doping of ZnO in the future.
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