期刊
NANOTECHNOLOGY
卷 21, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/31/315201
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资金
- French ANR agency [ANR-08-NANO-031 BoNaFo, ANR-08-BLAN-0179 NanoPhotoNit]
- National Science Council of Taiwan [NSC98-2923-M-110-001-MY3]
We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at -1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.
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