期刊
NANOTECHNOLOGY
卷 21, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/40/405701
关键词
-
资金
- National Research Foundation of Korea (NRF) [2009-0093823]
- Ministry of Education, Science and Technology
We have systematically investigated the semimetal-to-semiconductor transition of individual single-crystalline Bi nanowires. For this work, we developed a technique to reduce the diameter of Bi nanowires grown by our unique on-film formation of nanowires (OFF-ON) method. Cooling down the substrate temperature during Bi film deposition by use of liquid nitrogen, film structures with small-sized grains were obtained. Through thermal annealing of these fine-granular Bi films, single-crystalline Bi nanowires can be produced with minimum diameter of similar to 20 nm. Elaborative nanofabrication techniques were employed to shape state-of-the-art four-probe devices based on the individual small diameter Bi nanowires. Diameter-dependent transport measurements on the individual Bi nanowires revealed that the semimetal-to-semiconductor transition really occurred at about d(w) = 63 nm. Moreover, band structure calculations supported this occurrence of the semimetal-to-semiconductor transition.
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