4.6 Article

Twinning-induced kinking of Sb-doped ZnO nanowires

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NANOTECHNOLOGY
卷 21, 期 43, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/43/435602

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  1. Ministry of Science and Technology of China [2009CB929202]
  2. National Science Foundation of China [50772054, U0734001]

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Sb-doped ZnO nanowires with kinking structures have been synthesized by a catalyst-free thermal evaporation method with the addition of Sb2O3. Transmission electron microscopy (TEM) observations revealed that the kinks of the nanowires are induced by twinning structures. {01 (1) over bar1}, {01 (1) over bar3} twins and heavy stacking faults in the (0001) plane were observed in these kinked nanowires. High-resolution TEM and energy dispersive x-ray spectroscopy showed that there exists an Sb-rich segregation layer in the twin boundaries of some nanowires. A formation mechanism of the kinked nanowires was proposed. The optical property of the synthesized nanowires was investigated by room-temperature photoluminescence.

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