期刊
NANOTECHNOLOGY
卷 21, 期 18, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/18/185704
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资金
- Korean Government [2009-0058617, R11-2005-048-00000-0, KRF-2008-2-D00264]
- Korea Ministry of Commerce Industry and Energy
- NRL [R0A-2007-000-20105-0]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2008-0058617, 2008-0060665, 2008-0060670, 2008-313-D00264] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (Pt-NP) with about 5.8 nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to Pt-NP-embedded TiO2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10(4)) and the stable device performance. These phenomena were caused by the presence of PtNP inserted within TMO films.
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