期刊
NANOTECHNOLOGY
卷 21, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/8/085702
关键词
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资金
- NASA [NNX08AL96G]
- Nanoelectronics Research Initiative (NRI) MIND center
- NSF [CCF-0829907]
- Micron Technology Foundation
- NDSEG
- IBM
- NASA [98525, NNX08AL96G] Funding Source: Federal RePORTER
- Direct For Computer & Info Scie & Enginr
- Division of Computing and Communication Foundations [0829907] Funding Source: National Science Foundation
We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable for other nanoscale devices such as graphene, nanowires, or molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.
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