期刊
NANOTECHNOLOGY
卷 20, 期 45, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/45/455604
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资金
- AFOSR [FA 9550-08-1-0198]
- DoD [NSSEFF N00244-09-1-0091]
- INSPIRE [HEA PRTLI4]
- European Commission under Marie Curie Actions [041985]
- Science Foundation of Ireland [06/RFP/EWE014]
We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs(001) substrate by droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size distribution of the QDs are confirmed using atomic force and transmission electron microscope images. A staggered type-II QD band structure is suggested by a photoluminescence peak that is blue shifted with increasing excitation intensity, a large emission polarization of 60%, and a long carrier decay time of 11.5 ns. Our research provides a different approach to fabricating high quality GaSb type-II QDs.
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