期刊
NANOTECHNOLOGY
卷 21, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/5/055302
关键词
-
资金
- National Science Council of ROC (NSC) [98-2120-M-008001]
This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO(2) or Si(3)N(4) matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.
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