期刊
NANOTECHNOLOGY
卷 20, 期 36, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/36/365203
关键词
-
资金
- Department of Science and Technology
- DST Nanoscience Initiative Project
We show simultaneous p- and n-type carrier injection in a bilayer graphene channel by varying the longitudinal bias across the channel and the top-gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 mu F cm(-2), a value about 125 times higher than the conventional SiO2 back-gate capacitance. Unlike the single-layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top-and back-gate geometry is estimated.
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