期刊
NANOTECHNOLOGY
卷 20, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/7/075401
关键词
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资金
- Hong Kong Special Administrative Region [G-YX0T, 5322/04E, N53408]
- National Science Foundation of China [10732100, 10831160504]
The effect of an applied mechanical stress on the tunneling conductance of a ferroelectric tunnel barrier between substrates and dissimilar electrodes is studied. Using a thermodynamic model and taking into account polarization charge screening in the electrodes and the near-surface inhomogeneous polarization distribution, the tunneling conductance is calculated as a function of the applied stress. It is found that reversing an applied stress can also change the tunnel barrier sufficiently to produce an effect similar to the giant electro-resistance one due to polarization reversal, which is particularly significant near the stress-dependent paraelectric/ferroelectric phase transition. Indeed, the sensitivity is adequate for high-sensitivity electronic and mechanical sensors, memories and other nanodevices.
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