Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type ex situ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with fluences of the order of 10(13)-10(14) cm (2), and the NWs were subsequently annealed by rapid thermal annealing (RTA). Transmission electron microscopy showed no residual defect in the volume of the NWs. Electrical measurements of single NWs with a Pt/Ir tip inside a scanning electron microscope (SEM) showed significant increase of electrical conductivity of the implanted NWs compared to that of a nominally undoped NW. The p-type, i. e. B-implanted, NWs showed the conductivity expected from the intended doping level. However, the n-type NWs, i. e. P -and As-implanted ones, showed one to two orders of magnitude lower conductivity. We think that a stronger surface depletion is mainly responsible for this behavior of the n-type NWs.