期刊
NANOTECHNOLOGY
卷 19, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/40/405201
关键词
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资金
- National Research Laboratory (NRL)
- Korea Science and Engineering Foundation (KOSEF)
- Korea Ministry of Knowledge Economy
- Korea Research Foundation [KRF-2006-331-D00125]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Education, Science & Technology (MoST), Republic of Korea [gist-06] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2006-331-D00125, R0A-2007-000-10012-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Polymer non-volatile memory devices in 8 x 8 array cross- bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 mu m were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.
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