The detection of H2S at room temperature by using individual indium oxide nanowire transistors

In2O3 nanotransistors for gas sensor applications were fabricated using individual In2O3 nanowires prepared by chemical vapor deposition. The nanosensors demonstrate characteristics of high sensitivity to H2S, and fast response and recovery, with the detection limit at 1 ppm at room temperature. The high sensitivity might be attributed to the strong electron accepting capability of H2S to the nanowires and the high surface-to-volume ratio of the nanowires. In addition, the nanosensors show a good selective detection of H2S under exposure to NH3 and CO even at 1000 ppm; they are highly promising for practical applications in detection of low concentration H2S at room temperature.