期刊
NANOTECHNOLOGY
卷 19, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/39/395204
关键词
-
资金
- National R& D Project for Nano Science and Technology [10022916-2006-22]
- Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation [KRF-2006-005-J03601]
- Korea Ministry of Commerce, Industry and Energy
- Korea Science and Engineering Foundation (KOSEF) through the National Research Lab
- Medium-term Strategic Technology Development Program of Ministry of Commerce, Industry and Energy and the Nano R D Program [M10703000980-07M0300-98010]
- [R0A-2005-000-10045-02 (2008)]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [10022916, 10030101] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2005-01237, 과C6A1602] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据