期刊
NANOTECHNOLOGY
卷 20, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/1/015601
关键词
-
资金
- Korean Government (MOEHRD) [KRF-2007-521-D00191]
- Ministry of Commerce, Industry and Energy (MOCIE)
- Ministry of Knowledge Economy (MKE)
- Korea Industrial Technology Foundation (KOTEF)
- Ministry of Knowledge Economy (MKE), Republic of Korea [2008-A08-005] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt% Ga with respect to the Zn content showed minimum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. A p-n diode structure with Ga-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescence from the side view of the device, showing weak ultraviolet and various deep-level emissions.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据