期刊
NANOSCALE RESEARCH LETTERS
卷 13, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-018-2712-1
关键词
Gallium oxide (Ga2O3); Ultrawide bandgap semiconductor; Power device; Schottky barrier diode (SBD); Breakdown electric field; Baliga's figure of merit; On-resistance
资金
- National Key R@D Program of China [2018YFB0406504]
Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga-,03 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
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